Physical Analysis and Design of Resonant Plasma-Wave Transistors for Terahertz Emitters
Physical Analysis and Design of Resonant Plasma-Wave Transistors for Terahertz Emitters
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太赫兹发射器谐振等离子波晶体管的物理分析与设计
DOI：
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发表时间：
2015
影响因子：
3.2
通讯作者：
Kyung Rok Kim
中科院分区：
文献类型：
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作者：
Jong Yul Park;Sung;Sung;Kyung Rok Kim
在这项工作中，我们进行了太赫兹（THz）发射器的谐振等离子体波晶体管（PWTs）的物理分析。通过分析分解的等离子体波的上游和下游集中在不同的相速度，我们表明，反射系数是超过1，并新引入PWT设计窗口的基础上，一个简单的2-D绘图，它可以提供最大的通道长度（Lmax）和工作频率。通过我们的设计窗口分析，具有50 - 160 fs动量弛豫时间的应变硅沟道（即，沟道迁移率500 - 1500 cm 2/Vs）显示技术兼容的Lmax为12 - 40 nm，可调谐谐振频率为2 - 10 THz。
In this work, we performed physical analysis of resonant plasma-wave transistors (PWTs) for terahertz (THz) emitters. Through the analytical decomposition of plasma-waves into upstream and downstream focusing on the different phase velocity, we show that the reflection coefficient is over unity and newly introduce the PWT design window based on a simple 2-D plot, which can provide both the maximum channel length (Lmax) and operation frequency. By our design window analysis, strained silicon channel with a momentum relaxation time of 50-160 fs (i.e., channel mobility 500-1500 cm2/Vs) show technology-compatible Lmax as 12-40 nm with a tunable resonance frequency of 2- 10 THz .