The sintering behavior and microwave dielectric properties of Bi(Nb,Sb)O4 ceramics
The sintering behavior and microwave dielectric properties of Bi(Nb,Sb)O4 ceramics
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Bi(Nb,Sb)O4陶瓷的烧结行为和微波介电性能
DOI：
10.1016/j.ceramint.2003.10.021
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发表时间：
2004
影响因子：
5.2
通讯作者：
Z. Yin
中科院分区：
文献类型：
--
作者：
Ning Wang;Meiyu Zhao;Wei Li;Z. Yin
采用Sb 2 O 5替代Nb 2 O 5，研究了替代对BiNbO 4陶瓷烧结行为和微波介电性能的影响。烧结BiNb（1-x）SbxO 4陶瓷中形成固溶体，x值不大于0.4。随着x值从0增加到0.4，斜方相BiNb（1−x）SbxO 4的晶胞体积从331.86减小到324.99 Ω 3。致密化温度从800 °C增加到940°C。结果表明，Sb替代Nb和烧结温度对BiNb（1−x）SbxO 4陶瓷的微波介电性能有影响。饱和ε r值随着x从0增加到0.1而从44.00增加到44.61，然后随着x增加到0.4而降低到40.69。饱和Q×f值随x值的增大而减小。τ f值与BiNb（1−x）SbxO 4的晶胞体积相关，并从x=0时的正值14.19ppm/°C连续下降到x=0.4时的负值−30.94ppm/°C。当烧结温度为820°C，x = 0.05时，BiNb（1−x）SbxO 4陶瓷的微波介电性能最佳，εr = 44.49，Q×f = 14，278 GHz，τf = 5.19ppm/°C。
Sb2O5were selected to substitute Nb2O5and the effects of substitution on the sintering behavior and the microwave dielectric properties of BiNbO4ceramics were studied. Solid solutions formed in sintered BiNb(1−x)SbxO4ceramics with x value being no more than 0.4. The unit cell volume of orthorhombic phase BiNb(1−x)SbxO4decreased from 331.86 to 324.99Å3with x value increasing from 0 to 0.4. The densified temperatures increased from 800 to 940°C. The microwave dielectric properties of BiNb(1−x)SbxO4ceramics were found to be affected by the substitution of Sb for Nb and the sintering temperature. The saturated εrvalues first increased from 44.00 to 44.61 with x increasing from 0 to 0.1 and then decreased to 40.69 with x to 0.4. The saturated Q×f values decreased with increasing of x value. The τfvalues were correlated to the unit cell volume of BiNb(1−x)SbxO4and continuously decreased from a positive value of 14.19ppm/°C for x=0 to a negative value of −30.94ppm/°C for x=0.4. At a sintering temperature of 820°C and x value of 0.05, BiNb(1−x)SbxO4ceramics exhibited the optimum microwave dielectric properties of εr∼ 44.49, Q×f∼14,278GHz, and τf∼−5.19ppm/°C.