Low-temperature photoluminescence of epitaxial InAs
Low-temperature photoluminescence of epitaxial InAs
复制标题
外延InAs的低温光致发光
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
M. Thewalt
中科院分区：
文献类型：
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作者：
Y. Lacroix;C. Tran;S. Watkins;M. Thewalt
对金属-有机化学气相沉积生长的高纯外延InAs进行了光致发光研究以及反射率和透射率测量。我们报道了在1.4K温度下与激子、施主和受主杂质有关的跃迁的光学识别，在较高温度和高达7T的磁场下的测量支持这些识别。根据极化子反射特性的最小值，我们得到激子禁带宽度为415.65±0.01 meV。用光致发光方法观察到了三种不同受主的施主-受主-受主对和受主束缚激子跃迁，并初步将其中一个与As晶格上的Ga杂质形成的双受主联系起来。观察到了束缚能为0.42 meV的施主束缚激子跃迁。电子有效质量和g因子随磁场的变化分别为(0.026±0.002)m0和−15.3±0.2.
Photoluminescence studies as well as reflectance and transmittance measurements were performed on high‐purity epitaxial InAs grown by metal‐organic chemical‐vapor deposition. We report the optical identification of excitonic, donor, and acceptor impurity related transitions at a temperature of 1.4 K. Measurements at higher temperature and in the presence of magnetic fields up to 7 T support these identifications. We find the excitonic band gap at 415.65±0.01 meV according to the minimum in the polariton reflectance feature. The donor–acceptor‐pair and acceptor‐bound exciton transitions for three different acceptors are observed by photoluminescence, and we tentatively associate one of them to a double acceptor formed by a Ga impurity on an As lattice site. A donor‐bound exciton transition is observed with a binding energy of 0.42 meV. The magnetic field dependence yields values of the electron effective mass and g factor of (0.026±0.002)m0 and −15.3±0.2, respectively, in good agreement with values obtaine...