Roughness study on line and space patterning with chemo-epitaxy directed self-assembly
Roughness study on line and space patterning with chemo-epitaxy directed self-assembly
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化学外延定向自组装线和空间图案的粗糙度研究
DOI：
10.1117/12.2552354
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
C. Mack
中科院分区：
文献类型：
--
作者：
H. Suh;Viktor Dudash;G. Lorusso;C. Mack
在将定向自组装（DSA）工艺引入到大批量制造中时，图形的粗糙度是主要的检查点之一。本研究的重点是了解DSA粗糙度的起源，并讨论改善DSA特定粗糙度的策略。使用具有PS-b-PMMA的3X DSA LiNe流作为模型病例。无偏线边缘粗糙度（LER）和线宽粗糙度（LWR）的测量使用功率谱密度（PSD）分析CDSEM图像。我们发现，低频LER是特别敏感的组装条件。通过优化材料和工艺条件，无偏LWR降低约10%，而无偏LER降低约15%。
For the introduction of directed self-assembly (DSA) process into high volume manufacturing, the roughness of pattern is one of main check points. The focus of this study is to understand the origin of DSA roughness and to discuss the strategies to improve DSA-specific roughness. 3X DSA LiNe flow with PS-b-PMMA was used as a model case. Unbiased line edge roughness (LER) and linewidth roughness (LWR) were measured using power spectral density (PSD) analysis on CDSEM images. We found that low frequency LER is particularly sensitive to the assembly conditions. By optimizing material and process conditions, unbiased LWR was reduced by about 10%, while unbiased LER was reduced by about 15%.