Nonduplicate Polarization-Diversity 32 × 32 Silicon Photonics Switch Based on a SiN/Si Double-Layer Platform
Nonduplicate Polarization-Diversity 32 × 32 Silicon Photonics Switch Based on a SiN/Si Double-Layer Platform
复制标题
基于 SiN/Si 双层平台的非重复偏振分集 32 × 32 硅光子开关
DOI：
10.1109/jlt.2019.2934763
复制
发表时间：
2020
影响因子：
4.7
通讯作者：
K. Yamada
中科院分区：
文献类型：
--
作者：
Keijiro Suzuki;S. Namiki;H. Kawashima;K. Ikeda;R. Konoike;N. Yokoyama;M. Seki;M. Ohtsuka;S. Saitoh;S. Suda;H. Matsuura;K. Yamada
在非重复偏振分集开关的基础上，引入SiN跨接波导，制作了偏振分集32 × 32硅光子开关，并对其进行了表征。SiN跨接波导用于简化光路，在边缘耦合器和开关矩阵之间具有均匀的路径长度，并显著减少波导交叉点的数量。该开关芯片是使用300毫米绝缘体上硅晶圆试验线制造。制造的开关包括7，600多个组件，使其成为有史以来最大的基于互补金属氧化物半导体的硅光子电路。开关芯片的电气和光学封装和评估的采样端口连接32个路径，平均片上损耗为1.35 dB，平均偏振相关损耗为3.2 dB，其中75%的测量路径表现出小于3 dB的损耗。差分群延迟测量为1.7 ps。通过优化器件设计可以进一步提高性能。
We fabricate and characterize a polarization-diversity 32 × 32 silicon photonics switch by newly introducing SiN overpass waveguides onto our nonduplicate polarization-diversity path-independent insertion-loss switch. The SiN overpass waveguides are used to simplify the optical paths with a uniform path length between the edge couplers and the switch matrix and significantly reduce the number of waveguide intersections. The switch chip is fabricated using a 300-mm silicon-on-insulator wafer pilot line. The fabricated switch comprises more than 7,600 components, making this the largest ever complementary-metal-oxide-semiconductor-based silicon photonics circuit. The switch chip is electrically and optically packaged and evaluated for a sampled port connection with 32 paths, with an average on-chip loss of ∼35 dB and an average polarization-dependent loss of 3.2 dB where 75% of the measured paths exhibit a loss of less than 3 dB. The differential group delay is measured to be 1.7 ps. The performance can be further improved by optimizing the device design.