Optical properties of GaSe grown with an excess and a lack of Ga atoms
Optical properties of GaSe grown with an excess and a lack of Ga atoms
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DOI：
10.1063/1.1609045
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发表时间：
2003-09
影响因子：
3.2
通讯作者：
S. Shigetomi;T. Ikari
中科院分区：
文献类型：
--
作者：
S. Shigetomi;T. Ikari
测量了过量Ga或Se原子对GaSe的光致发光和光电流的影响。具有过量Ga原子的样品的1.77 eV发射带归因于从0.175 eV的施主能级到0.152 eV的受主能级的跃迁。该施主能级被认为与间隙Ga原子形成的缺陷有关。具有过量Se原子的样品的PC谱中的1.92 eV峰被认为与间隙Se原子相关联。此外，在具有过量Ga或Se原子的样品中观察到与间接带跃迁相关的2.036 eV（PL谱在77 K）的发射带和1.99 eV（PC谱在295 K）的肩部。结果表明，GaSe中的间接带跃迁是由过量的Ga和Se原子引起的。
Measurements of the photoluminescence (PL) and photocurrent (PC) have been made on GaSe with excess Ga or Se atoms. The 1.77 eV emission band for the sample with excess Ga atoms is attributed to the transition from the donor level at 0.175 eV to the acceptor level at 0.152 eV. This donor level is considered to be related to the defects formed by the interstitial Ga atoms. The 1.92 eV peak in the PC spectrum of the sample with excess Se atoms is thought to be associated with the interstitial Se atoms. Moreover, an emission band at 2.036 eV (PL spectra at 77 K) and a shoulder at 1.99 eV (PC spectra at 295 K) related to the indirect band transition were observed in the samples with excess Ga or Se atoms. It was found that the indirect band transition in GaSe is caused by the excess Ga and Se atoms.