Effective masses of holes at GaAs-AlGaAs heterojunctions.

Effective masses of holes at GaAs-AlGaAs heterojunctions.
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GaAs-AlGaAs 异质结处的有效空穴质量。

DOI:
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发表时间:
1985
期刊:
Physical Review B (Condensed Matter)
影响因子:
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通讯作者:
L. J. Sham
L. J. Sham
中科院分区:
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文献类型:
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作者:
David Broido;L. J. Sham

文献摘要

被引文献

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