Loss Compensated PCM GeTe-Based Latching Wideband 3-bit Switched True-Time-Delay Phase Shifters for mmWave Phased Arrays

Loss Compensated PCM GeTe-Based Latching Wideband 3-bit Switched True-Time-Delay Phase Shifters for mmWave Phased Arrays
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适用于毫米波相控阵的损耗补偿 PCM GeTe 锁存宽带 3 位开关真延时移相器

DOI:
10.1109/tmtt.2020.3007833
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发表时间:
2020
影响因子:
4.3
通讯作者:
R. Mansour
R. Mansour
中科院分区:
工程技术1区
文献类型:
--
作者:
Tejinder Singh;R. Mansour

文献摘要

被引文献

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本文报道了基于相变材料(PCM)碲化锗(GeTe)的3位毫米波开关真延时(TTD)移相器的首次实现。介绍了两种TTD移相器。第一个移相器设计使用四个单片集成的PCM单刀三掷(SP3T)开关,通过延迟线路由信号。通过集成两个保持在结晶状态的固定PCM GeTe元件,沿着延迟线的优化宽度,各种状态之间的插入损耗变化被最小化。PCM开关单元为锁存型,因此不消耗静态直流电源。SP3T开关采用两级背靠背连接,可提供20°精度的3位相移。第二个移相器设计使用两个背靠背连接的PCM单刀八掷(SP8T)开关。两个移相器都设计为在8 GHz宽频带上工作,中心频率为30 GHz。这些器件是使用八层微加工工艺在内部制造的。所提出的设备是高度小型化的整体设备面积为0.42mm2和1.4mm2的第一和第二移相器,分别。第一个移相器表现出测量的平均损耗为4.3 dB,变化为±0.3 dB,回波损耗优于20 dB,而第二个移相器表现出低的平均测量损耗为3.8 dB,只有±0.2 dB的损耗变化,回波损耗优于17 dB,在30 GHz。两种移相器均提供180°线性相移,最差情况下延迟低于18 ps。
This article reports the first implementation of 3-bit millimeter-wave switched true-time-delay (TTD) phase shifters based on phase-change material (PCM) germanium telluride (GeTe). Two TTD phase shifters are presented. The first phase shifter is designed using four monolithically integrated PCM single-pole triple-throw (SP3T) switches to route the signal through delay lines. The insertion loss variation between various states is minimized by integrating two fixed PCM GeTe elements maintained in the crystalline state, along with the optimized width of the delay lines. The PCM switching cells are latching type, thus, consume no static dc power. The SP3T switches are connected back-to-back in two stages to provide a 3-bit phase shift with 20° precision. The second phase shifter is designed using two back-to-back connected PCM single-pole eight-throw (SP8T) switches. Both phase shifters are designed to operate over an 8 GHz wide frequency band with a center frequency of 30 GHz. The devices are fabricated in-house using an eight-layer microfabrication process. The proposed devices are highly miniaturized with an overall device area of 0.42mm2 and 1.4mm2 for the first and second phase shifter, respectively. The first phase shifter exhibit a measured average loss of 4.3 dB with a variation of ±0.3 dB and a return loss better than 20 dB, while the second phase shifter demonstrates low average measured loss of 3.8 dB with only ±0.2 dB loss variation and returns loss better than 17 dB at 30 GHz. Both phase shifters provide 180° linear phase shift with lower than 18 ps delay in the worst case.