Tuning the Performance of Negative Tone Electron Beam Resists for the Next Generation Lithography
Tuning the Performance of Negative Tone Electron Beam Resists for the Next Generation Lithography
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DOI：
10.1002/adfm.202202710
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发表时间：
2022-05-27
影响因子：
19
通讯作者：
Winpenny, Richard E. P.
中科院分区：
文献类型：
--
作者：
Lewis, Scott M.;DeRose, Guy A.;Winpenny, Richard E. P.
研制了一种新型的基于异金属环的电子束负色抗蚀剂材料。最初的抗蚀剂性能表现出15 nm半间距的分辨率，但以低灵敏度为代价。为了提高灵敏度，采用了利用二次俄歇电子产生模型的三维蒙特卡罗模拟。模拟表明，通过在金属-有机核周围加入适当的化学官能团，可以在保持高分辨率的同时显著提高灵敏度。基于仿真的新型电阻设计具有预期的更高的灵敏度，说明了仿真方法的价值。
A new class of electron bean negative tone resist materials has been developed based on heterometallic rings. The initial resist performance demonstrates a resolution of 15 nm half-pitch but at the expense of a low sensitivity. To improve sensitivity a 3D Monte Carlo simulation is used that utilizes a secondary and Auger electron generation model. The simulation suggests that the sensitivity can be dramatically improved while maintaining high resolution by incorporating appropriate chemical functionality around the metal-organic core. The new resists designs based on the simulation have the increased sensitivity expected and illustrate the value of the simulation approach.