Change in photoluminescence from Er-doped TiO2 thin films induced by optically assisted reduction
Change in photoluminescence from Er-doped TiO2 thin films induced by optically assisted reduction
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DOI：
10.1063/1.1530733
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发表时间：
2002-12-16
影响因子：
4
通讯作者：
Zhao, X
中科院分区：
文献类型：
--
作者：
Komuro, S;Katsumata, T;Zhao, X
采用激光烧蚀法在Si衬底上制备了具有锐钛矿结构的掺铒TiO2（TiO2：Er）薄膜。在过带隙激发下，观察到了在可见光区和红外区的尖锐和强烈的Er相关发射。在低温下新出现了宽的光致发光峰，峰值在530 nm左右。已经理解的是，宽PL是由光学辅助还原效应引起的，该光学辅助还原效应是由H2O吸附和通过UV照射将TiO2还原成Ti2O3的过程引起的。在IR区域，Er相关的发射包括一个主峰位于1.534 μ m和许多位于1.54 μ m左右的子峰，即使在室温下也可以观察到。激烈的热淬火的Er相关的1.54妈妈发射也被认为是由于光学辅助还原效应。(C)2002年美国物理学会。
Erbium-doped TiO2 (TiO2:Er) thin films with the anatase structure have been prepared on Si substrate by laser ablation. Sharp and intense Er-related emission in the visible region as well as in the IR region has been observed under over-band-gap excitation. The broad photoluminescence (PL) peaking at about 530 nm newly appears at low temperature. It has been understood that the broad PL is induced by an optically assisted reduction effect that is caused by both the H2O adsorption and the reduction process of TiO2 to Ti2O3 by UV illumination. In the IR region, Er-related emission consisted of one main peak located at 1.534 mum and many subpeaks located at around 1.54 mum can be observed even at room temperature. The drastic thermal quenching of the Er-related 1.54 mum emission is also considered due to the optically assisted reduction effect. (C) 2002 American Institute of Physics.