Layer Transfer of Cu(In,Ga)Se2 Thin Film and Solar Cell Fabrication
Layer Transfer of Cu(In,Ga)Se2 Thin Film and Solar Cell Fabrication
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Cu(In,Ga)Se2 薄膜层转移及太阳能电池制造
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
H. Takakura
中科院分区：
文献类型：
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作者：
T. Minemoto;T. Anegawa;S. Osada;H. Takakura
通过剥离工艺将 Cu(In,Ga)Se2 (CIGS) 薄膜转移到替代基板上，并使用转移的薄膜制造太阳能电池。 CIGS 薄膜通过三阶段蒸发工艺在 Mo/钠钙玻璃 (SLG) 基板上生长。 CIGS 薄膜被转移到两种替代基材上：刚性 SLG 和柔性聚酰亚胺薄膜。在剥离过程中，没有在 CIGS 和 Mo 背接触层之间制备有意的牺牲层。制备了具有In2O3:Sn/ZnO/CdS/CIGS/Mo/导电环氧树脂/替代基板结构的CIGS太阳能电池。这两种太阳能电池的转换效率几乎是采用标准工艺制造的 CIGS 太阳能电池的一半。这是因为电压相关的电流收集和高串联电阻导致短路电流和填充因子较差。 CIGS 层的成分分布和背接触特性的修改将提高器件性能。这些结果证明了使用 CIGS 太阳能电池剥离工艺来扩大基板材料选择范围的可能性。
Cu(In,Ga)Se2 (CIGS) thin films were transferred to alternative substrates by a lift-off process, and solar cells were fabricated using the transferred films. CIGS films were grown on Mo/soda-lime glass (SLG) substrates by a three-stage evaporation process. The CIGS films were transferred to two alternative substrates: a rigid SLG and a flexible polyimide film. In the lift-off process, an intentional sacrificial layer between CIGS and Mo back contact layers was not prepared. CIGS solar cells with In2O3:Sn/ZnO/CdS/CIGS/Mo/conductive-epoxy/alternative-substrates structure were fabricated. Both solar cells showed almost half of the conversion efficiencies of a CIGS solar cell fabricated by a standard process. This is because of poor short circuit current and fill factor due to voltage-dependent current collection and high series resistance. Modifications of the composition profile of the CIGS layer and back contact property will improve the device performance. These results demonstrated the possibility of using the lift-off process for CIGS solar cells to widen the variety of substrate material choice.