Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas
Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas
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DOI：
10.1109/led.2018.2874190
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发表时间：
2018-12-01
影响因子：
4.9
通讯作者：
Jena, Debdeep
中科院分区：
文献类型：
--
作者：
Bader, Samuel James;Chaudhuri, Reet;Jena, Debdeep
高性能p沟道晶体管对于在宽带隙电子器件中实现高效互补电路至关重要，但由于在宽带隙半导体中操纵空穴的固有挑战，此类器件的进展远远落后于强大的电子器件。这项工作以材料生长方面的最新进展为基础，为 GaN/AlN 宽带隙 p-FET 结构同时创下了导通电流 (10 mA/mm) 和开关调制（四阶）记录。推导了紧凑的分析 pFET 模型，并将结果与文献中的各种替代方案进行了基准比较，阐明了异质结构的权衡，以实现下一代紧凑型高功率器件的集成宽带隙 CMOS。
High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind their powerful electron-based counterparts due to the inherent challenges of manipulating holes in wide-gap semiconductors. Building on recent advances in materials growth, this work sets simultaneous records in both on-current (10 mA/mm) and on-off modulation (four orders) for the GaN/AlN wide-bandgap p-FET structure. A compact analytical pFET model is derived, and the results are benchmarked against the various alternatives in the literature, clarifying the heterostructure trade-offs to enable integrated wide-bandgap CMOS for next-generation compact high-power devices.