Resistive switching via the converse magnetoelectric effect in ferromagnetic multilayers on ferroelectric substrates
Resistive switching via the converse magnetoelectric effect in ferromagnetic multilayers on ferroelectric substrates
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DOI：
10.1088/0957-4484/21/47/475202
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发表时间：
2010-11-26
期刊：
影响因子：
3.5
通讯作者：
Kohlstedt, H.
中科院分区：
文献类型：
--
作者：
Pertsev, N. A.;Kohlstedt, H.
一个电压控制的电阻开关预测的铁磁多层膜和自旋阀机械耦合到铁电衬底。低电阻状态和高电阻状态之间的切换的结果从应变驱动的磁化重取向约90度，这被证明是发生在具有高磁致伸缩和弱立方磁晶各向异性的铁磁层。这样的重新取向，不需要外部磁场，可以通过实验实现施加适度的电场到厚基板（散装或膜型）由弛豫铁电体具有压电系数。所提出的具有巨磁电阻的多铁性混合体可以用作具有非破坏性读出的电写入非易失性磁存储单元。
A voltage-controlled resistive switching is predicted for ferromagnetic multilayers and spin valves mechanically coupled to a ferroelectric substrate. The switching between low-and high-resistance states results from the strain-driven magnetization reorientations by about 90 degrees, which are shown to occur in ferromagnetic layers with a high magnetostriction and weak cubic magnetocrystalline anisotropy. Such reorientations, not requiring external magnetic fields, can be realized experimentally by applying moderate electric field to a thick substrate (bulk or membrane type) made of a relaxor ferroelectric having ultrahigh piezoelectric coefficients. The proposed multiferroic hybrids exhibiting giant magnetoresistance may be employed as electric-write nonvolatile magnetic memory cells with nondestructive readout.