NITROGEN-BONDING ENVIRONMENTS IN GLOW-DISCHARGE DEPOSITED ALPHA-SI-H FILMS
NITROGEN-BONDING ENVIRONMENTS IN GLOW-DISCHARGE DEPOSITED ALPHA-SI-H FILMS
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DOI：
10.1103/physrevb.28.3234
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发表时间：
1983-01-01
影响因子：
3.7
通讯作者：
CZUBATYJ, W
中科院分区：
文献类型：
--
作者：
LUCOVSKY, G;YANG, J;CZUBATYJ, W
我们用红外吸收光谱研究了辉光放电沉积的a-Si：H薄膜中氮原子的局域成键。我们发现两种不同的成键环境的N，这是确定通过不同的频率的Si-N不对称键伸缩振动，840 cm− 1的高T s膜，和790 cm− 1的低T s膜。在衬底上沉积的薄膜中，保持在超过300 ℃的温度下，N被结合在一个平面位置上，有三个硅最近邻，一个氢第二最近邻。在低于200 ℃的衬底上产生的薄膜中，N原子也处于三重配位平面位置，但所有最近和第二最近的原子都是Si原子。
We have studied the local bonding of nitrogen atoms in glow-discharge—deposited films of a− Si: H by using ir absorption spectroscopy. We find two different bonding environments for N, which are identified through different frequencies for the Si-N asymmetric bond-stretching vibration, 840 cm− 1 for the high-T s films, and 790 cm− 1 for the low-T s films. In films deposited on substrates held at temperatures in excess of 300 C, the N is incorporated in a planar site with three silicon nearest neighbors, and one hydrogen second-nearest neighbor. In films produced on substrates held below 200 C, the N atom is also in a threefold-coordinated planar site, but with all of the nearest and second-nearest atoms being Si atoms.