Large bandgap of pressurized trilayer graphene
Large bandgap of pressurized trilayer graphene
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DOI：
10.1073/pnas.1820890116
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发表时间：
2019-05-07
影响因子：
11.1
通讯作者：
Chen, Bin
中科院分区：
文献类型：
--
作者：
Ke, Feng;Chen, Yabin;Chen, Bin
基于石墨烯的纳米器件发展迅速，现在被认为是后硅电子技术的有力竞争者。然而，石墨烯基晶体管面临的一个挑战是在石墨烯中打开一个相当大的带隙。到目前为止，在双层石墨烯中实现的最大带隙是几百meV，但这个值仍然远远低于实际应用的阈值。通过原位电测量，我们通过调整层间相互作用与压力，观察到压缩三层石墨烯的半导体特性。光学吸收测量表明，在这种半导体状态下可以实现2.5 +/- 0.3 eV的本征带隙，并且一旦打开可以保持到几GPa。在压缩三层石墨烯中实现宽带隙为碳基电子器件提供了机会。
Graphene-based nanodevices have been developed rapidly and are now considered a strong contender for postsilicon electronics. However, one challenge facing graphene-based transistors is opening a sizable bandgap in graphene. The largest bandgap achieved so far is several hundred meV in bilayer graphene, but this value is still far below the threshold for practical applications. Through in situ electrical measurements, we observed a semiconducting character in compressed trilayer graphene by tuning the interlayer interaction with pressure. The optical absorption measurements demonstrate that an intrinsic bandgap of 2.5 +/- 0.3 eV could be achieved in such a semiconducting state, and once opened could be preserved to a few GPa. The realization of wide bandgap in compressed trilayer graphene offers opportunities in carbon-based electronic devices.