A New Slicing Method of Monocrystalline Silicon Ingot by Wire EDM
A New Slicing Method of Monocrystalline Silicon Ingot by Wire EDM
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DOI：
10.2526/jseme.34.14
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发表时间：
1998-12
期刊：
影响因子：
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通讯作者：
A. Okada;Y. Uno;Y. Okamoto;H. Itoh;T. Hirano
中科院分区：
文献类型：
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作者：
A. Okada;Y. Uno;Y. Okamoto;H. Itoh;T. Hirano
单晶硅是半导体工业中最重要的材料之一，因为它具有许多优异的半导体性能。在硅晶片的制造过程中，传统上使用内径（ID）刀片和多线锯来切片硅锭。然而，当将该方法应用于预期在不久的将来使用的12或16英寸直径的大尺寸晶片时，在效率、精度、浆料处理和污染方面会遇到一些问题。因此，强烈需要改进传统方法或新的切片方法。本研究探讨电火花线切割矽锭之可行性，并进行加工特性之实验研究。作为外延薄膜生长衬底的硅片具有0.01Ω·cm量级的低电阻率，这使得线切割硅锭成为可能。有人澄清，新的线电火花加工作为一种新的切片方法的应用潜力，并使用这种方法的表面粗糙度是一样小，使用传统的多线锯的方法。同时指出，在小电流、长放电时间的条件下，线切割加工可以减少电极丝材料在被加工表面上的粘附和扩散所造成的污染。
Monocrystalline silicon is one of the most important materials in the semiconductor industry because of its many excellent properties as a semiconductor. In the manufacturing process of silicon wafers, inner diameter (ID) blade and multi wire saw have conventionally been used for slicing silicon ingots. However, some problems in efficiency, accuracy, slurry treatment and contamination are experienced when applying this method to largescale wafers of 12 or 16 inch diameter expected to be used in the near future. Thus, the improvement of conventional methods or a new slicing method is strongly required. In this study, the possibility of slicing a silicon ingot by wire EDM was discussed and the machining properties were experimentally investigated. A silicon wafer used as substratum for epitaxial film growth has low resistivity in the order of 0.01Ω·cm, which makes it possible to cut silicon ingots by wire EDM. It was clarified that the new wire EDM has potential for application as a new slicing method, and that the surface roughness using this method is as small as that using the conventional multi wire saw method. Moreover, it was pointed out that the contamination due to the adhesion and diffusion of wire electrode material into the machined surface can be reduced by wire EDM under the condition of low current and long discharge duration.