Cyclotron resonance in epitaxial Bi1-xSbx films grown by molecular-beam epitaxy.
Cyclotron resonance in epitaxial Bi1-xSbx films grown by molecular-beam epitaxy.
复制标题
分子束外延生长的外延 Bi1-xSbx 薄膜中的回旋共振。
DOI：
--
复制
发表时间：
1993
期刊：
影响因子：
--
通讯作者：
Furdyna
中科院分区：
文献类型：
--
作者：
Heremans;Partin;Thrush;Karczewski;Richardson;Furdyna
在T= 1.8K、磁场强度为6 T、光子能量为2.5 ~ 21.4meV的条件下，测量了用分子束外延生长的半导体和半金属Bi 1-xSbx合金薄膜的远红外磁透射。样品生长在BaF 2衬底上，成分为0≤x≤ 22.5%，为单晶，三角轴垂直于表面平面。的测量进行了法拉第和Voigt的几何形状，与取向的磁场平行的二进制，biseccentric，和三角轴的薄膜。观察到电子和空穴的回旋共振线
The far-infrared magnetotransmission of thin films of semiconducting and semimetallic Bi 1-x Sb x alloys grown by molecular-beam epitaxy has been measured at fixed photon energies between 2.5 and 21.4 meV in magnetic fields up to 6 T, at T=1.8 K. The samples, grown on BaF 2 substrates with composition 0≤x≤22.5%, were monocrystalline, with the trigonal axis perpendicular to the surface plane. The measurements were carried out in Faraday and Voigt geometries, with the magnetic field oriented parallel to binary, bisectrix, and trigonal axes of the films. Cyclotron-resonance lines of both electrons and holes were observed