High-temperature piezoresistive pressure sensor based on implantation of oxygen into silicon wafer
High-temperature piezoresistive pressure sensor based on implantation of oxygen into silicon wafer
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DOI：
10.1016/j.sna.2012.03.027
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发表时间：
2012-06-01
影响因子：
4.6
通讯作者：
Sun, Chensong
中科院分区：
文献类型：
--
作者：
Li, Xin;Liu, Qin;Sun, Chensong
可以使用氧的离子注入来制备绝缘体上硅（SOI）衬底。对于压阻检测，硅的顶层（0.2 μ m厚）由于其优异的单晶特性而被用作活性材料。利用悬臂梁结构分析了SOI晶片顶部硅层的压阻效应。结果表明，在一定掺杂浓度条件下，晶向硅的纵向压阻系数< 1 1 0 >随温度的升高而减小，而横向压阻系数受温度的影响较小。在300摄氏度。Si< 1 1 0 >晶向具有较大的纵向和横向压阻系数，适合于高温压阻式压力传感器的制作。采用有限元法对压力传感器芯片结构进行了仿真分析。压力计芯片采用MEMS技术制造。所制造的传感器在300摄氏度下用0至6.0 MPa的施加压力进行测量。测试结果表明，该传感器的灵敏度约为30 mV/（mA MPa），非线性度小于1.5ps。重复性小于0.3ppm。该研究表明，SOI压阻式压力传感器可以在高达300摄氏度的高温下可靠地工作。(C)2012爱思唯尔有限公司版权所有。
Silicon on insulator (SOI) substrates can be prepared using ion implantation of oxygen. For piezoresistive detection, the top layer (0.2 mu m thickness) of silicon is used as the active material due to its excellent monocrystalline properties. The piezoresistive effect of the top silicon layer of the SOI wafer is analyzed using a cantilever structure. Results show that under certain doping concentration conditions, the longitudinal piezoresistive coefficients of < 1 1 0 > crystal direction silicon decrease with temperature, while transverse piezoresistive coefficients are less affected by temperature. At 300 degrees C. Si < 1 1 0 > crystal direction has larger longitudinal and transverse piezoresistive coefficients, which make it suitable for high temperature piezoresistive pressure sensor production. The pressure sensor chip structure is simulated and analyzed using the finite element method. The pressure gauge chips are manufactured using MEMS techniques. The manufactured sensors are measured with an applied pressure from 0 to 6.0 MPa at 300 degrees C. The test results show that the sensitivity is approximately 30 mV/(mA MPa), the non-linearity is less than 1.5 parts per thousand FS. and the repeatability is less than 0.3 parts per thousand FS. This research shows that the SOI piezoresistive pressure sensor could reliably work at high temperatures up to 300 degrees C. (C) 2012 Elsevier B.V. All rights reserved.