A model explaining mask-corner undercut phenomena in anisotropic silicon etching: a saddle point in the etching-rate diagram
A model explaining mask-corner undercut phenomena in anisotropic silicon etching: a saddle point in the etching-rate diagram
复制标题
DOI：
10.1016/s0924-4247(02)00017-1
复制
发表时间：
2002-04-01
影响因子：
4.6
通讯作者：
Asaumi, K
中科院分区：
文献类型：
--
作者：
Shikida, M;Nanbara, K;Asaumi, K
我们研究了（1 0 0）硅片上的底切现象，以解释为什么在掩蔽区的凸角下会出现（3 1 1）平面，以及为什么该平面在刻蚀过程中是稳定的。我们分析了作为晶体学取向的函数的蚀刻速率，并且发现（311）面具有独特的蚀刻特性。（3 1 1）面位于蚀刻速率图中的鞍点处。在此基础上，建立了一个倒凹模型，为上述问题提供了明确的答案。我们证明，我们的模型也可以解释的蚀刻轮廓的变化，在掩模形状的变化时，风车形的蚀刻掩模使用。(C)2002 Elsevier Science B.V.保留所有权利。
We investigated undercut phenomena on a (1 0 0) silicon wafer to explain why a (3 1 1) plane appears under the convex corner of a masking area, and why the plane is stable during the etching process. We analyzed the etching rate as a function of crystallographic orientations and found that the (3 1 1) plane has unique etching characteristics. The (3 1 1) plane is located at the saddle point in the etching-rate diagram. Based on this, we made an undercut model, which provides clear answers to the above questions. We demonstrated that our model can also explain the etched-profile change in terms of the change in the mask shape when a windmill-shaped etching mask is used. (C) 2002 Elsevier Science B.V. All rights reserved.