Direct Observation of Dislocation Core Structures in CdTe/GaAs(001)
Direct Observation of Dislocation Core Structures in CdTe/GaAs(001)
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DOI：
10.1126/science.269.5223.519
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发表时间：
1995-07
期刊：
影响因子：
56.9
通讯作者：
A. Mcgibbon;S. Pennycook;J. E. Angelo
中科院分区：
文献类型：
--
作者：
A. Mcgibbon;S. Pennycook;J. E. Angelo
提出了一种确定化合物半导体缺陷处亚晶格极性的方法。本文用最大熵分析方法对在300千伏扫描透射电子显微镜上获得的Z衬度像（Z为原子序数）进行了分析，得到了CdTe/GaAs（001）系统中60度位错和Lomer位错的核心结构。60度位错被观察到是滑移型的，而在Lomer位错的情况下，既有对称的（Hornstra-like）核心，也有意想不到的由四重环组成的非对称结构。
A strategy is presented for determining sublattice polarity at defects in compound semiconductors. Core structures of 60-degree and Lomer dislocations in the CdTe/GaAs(001) system have been obtained by the application of maximum-entropy analysis to Z-contrast images (Z is atomic number) obtained in a 300-kilovolt scanning transmission electron microscope. Sixty-degree dislocations were observed to be of the glide type, whereas in the case of Lomer dislocations, both a symmetric (Hornstra-like) core and an unexpected asymmetric structure made up of a fourfold ring were seen.