Influence of melt convection on distribution of indiuminclusions in liquid-encapsulated Czochralski-grown indium phosphide crystals,
Influence of melt convection on distribution of indiuminclusions in liquid-encapsulated Czochralski-grown indium phosphide crystals,
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熔体对流对液体封装直拉法生长的磷化铟晶体中铟夹杂物分布的影响，
DOI：
10.1007/s10854-020-04537-7
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
黄子鹏
中科院分区：
文献类型：
--
作者：
陈春梅;杨瑞霞;孙聂枫;王书杰;付莉杰;王阳;田树盛;黄子鹏
采用液封直拉法（LEC）生长的磷化铟（InP）单晶中存在铟（In）夹杂。观察到两种不同形貌的In夹杂物，一种是板条状，另一种是多面体状。大部分In包裹体呈板条状，其长边总是平行于0.5011？011年半？在（100）InP晶片中，这些夹杂物主要分布在两个区域中，晶片的中心和与中心相距一定距离的环形带。在实验中首次发现了InP晶体中In包裹体的这种特殊分布。为了阐明In夹杂物特殊分布的原因，对InP晶体生长过程中熔体对流进行了数值模拟。结果表明，晶体和坩埚的旋转显著影响熔体中对流胞的数量和方向，从而对过剩In在固液界面的富集和分布产生重要影响。不同的熔体对流改变了固液界面附近过剩In原子的径向分布，导致In夹杂在晶体中的径向分布不同。
Indium (In) inclusions have been found in h100i indium phosphide (InP) single crystals grown in In-rich melt by the liquid-encapsulated Czochralski (LEC).method. Two kinds of In inclusions with different morphologies, one is lath-like and the other is polyhedral, have been observed. Most of the In inclusions are lath-like and their long sides are always parallel to the ½011? or ½011? orientation.In (100) InP wafers, these inclusions mainly distribute in two regions viz., center of the wafer and annular belt at a certain distance from the center. These special distributions of In inclusions in InP crystals were found in our experiments for the first time. In order to clarify the cause of the special distributions of In inclusions, numerical simulations have been carried out on the melt convection in the process of InP crystal growth. The results show that the rotations of crystal and crucible significantly affect the number and direction of convection cells in the melt, which have a great influence on the enrichment and distri-bution of excess In at the solid–liquid interface. Different melt onvections modify the radial distributions of excess In atoms near the solid–liquid interface and result in different radial distributions of In inclusions in the crystals.