A multimechanism model for photon generation by silicon junctions in avalanche breakdown
A multimechanism model for photon generation by silicon junctions in avalanche breakdown
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DOI：
10.1109/16.760412
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发表时间：
1999-05-01
影响因子：
3.1
通讯作者：
Charles, JP
中科院分区：
文献类型：
--
作者：
Akil, N;Kerns, SE;Charles, JP
在 1.4-3.4 eV 的光子能量范围内测量了三种器件类型（1）商用硅 JFET、2）双极晶体管和 3）具有受控雪崩击穿偏置的 p-n 结的定制二极管的光发射。将之前发布的模型与这些数据进行比较，以阐明硅中雪崩光发射的机制。提出并论证了拟合测量光谱和其他研究人员测量光谱的多机制模型。该模型的成功表明，电子和空穴的间接复合是低于光强度峰值（类似于 1.8-2.0 eV）的主要发射机制，间接带内复合在高达类似于 2.3 eV 的中间能量中占主导地位，并且 k=0 附近的高场载流子群之间的直接带间复合在类似于 2.3 eV 的上方占主导地位，对于具有覆盖层钝化的结，必须应用干涉模型对测量的光谱进行建模。
Light emission from three device types (1) commercial silicon JFET's, 2) bipolar transistors, and 3) a custom diode) with p-n junctions biased in controlled avalanche breakdown, has been measured over the photon energy range 1.4-3.4 eV, Previously published models are compared with these data to elucidate the mechanisms responsible for avalanche light emission in silicon. A multimechanism model fitting measured spectra and spectra measured by other researchers is presented and justified. The success of the model indicates that indirect recombination of electrons and holes is the dominant emission mechanism below the light intensity peak (similar to 1.8-2.0 eV), that indirect intraband recombination dominates at intermediate energies up to similar to 2.3 eV, and that direct interband recombination between high-field populations of carriers near k=0 dominates above similar to 2.3 eV, For junctions with overlayer passivation, an interference model must be applied to model measured spectra,.