The interplay between structure and function in redox-based resistance switching.
The interplay between structure and function in redox-based resistance switching.
复制标题
DOI：
10.1039/c8fd00118a
复制
发表时间：
2019-02
影响因子：
3.4
通讯作者：
A. Kenyon;Manveer Singh Munde;W. H. Ng;M. Buckwell;D. Joksas;A. Mehonic
中科院分区：
文献类型：
--
作者：
A. Kenyon;Manveer Singh Munde;W. H. Ng;M. Buckwell;D. Joksas;A. Mehonic
我们报告的氧化物微观结构之间的关系在几十纳米的尺度和电阻开关行为的氧化硅的研究。在溅射的非晶氧化物的情况下，柱状结构的存在通过提供缺陷的初始结构化分布来实现有效的电阻切换，所述缺陷可以充当在施加适当的电偏压下形成导电氧空位链的前体。电极界面粗糙度的增加降低了电铸电压，降低了开关电压的分布。粗糙界面处电场增强对这些效应的任何贡献都是次要的，因为界面结构模板化了氧化物微观结构。
We report a study of the relationship between oxide microstructure at the scale of tens of nanometres and resistance switching behaviour in silicon oxide. In the case of sputtered amorphous oxides, the presence of columnar structure enables efficient resistance switching by providing an initial structured distribution of defects that can act as precursors for the formation of chains of conductive oxygen vacancies under the application of appropriate electrical bias. Increasing electrode interface roughness decreases electroforming voltages and reduces the distribution of switching voltages. Any contribution to these effects from field enhancement at rough interfaces is secondary to changes in oxide microstructure templated by interface structure.