Holographic Simulation of Correlated Electrons on a Trapped-Ion Quantum Processor
Holographic Simulation of Correlated Electrons on a Trapped-Ion Quantum Processor
复制标题
DOI:
10.1103/prxquantum.3.030317
复制
发表时间:
2021-12
期刊:
影响因子:
9.7
通讯作者:
Daoheng Niu;R. Haghshenas;Yuxuan Zhang;M. Foss-Feig;Garnet Kin-Lic Chan;Andrew C. Potter
中科院分区:
文献类型:
--
作者:
Daoheng Niu;R. Haghshenas;Yuxuan Zhang;M. Foss-Feig;Garnet Kin-Lic Chan;Andrew C. Potter
We develop holographic quantum simulation techniques to prepare correlated electronic ground states in quantum matrix product state (qMPS) form, using far fewer qubits than the number of orbitals represented. Our approach starts with a holographic technique to prepare a compressed approximation to electronic mean-field ground-states, known as fermionic Gaussian matrix product states (GMPS), with a polynomial reduction in qubit- and (in select cases gate-) resources compared to existing techniques. Correlations are then introduced by augmenting the GMPS circuits in a variational technique which we denote GMPS+X. We demonstrate this approach on Quantinuum's System Model H1 trapped-ion quantum processor for 1$d$ models of correlated metal and Mott insulating states. Focusing on the $1d$ Fermi-Hubbard chain as a benchmark, we show that GMPS+X methods faithfully capture the physics of correlated electron states, including Mott insulators and correlated Luttinger liquid metals, using considerably fewer parameters than problem-agnostic variational circuits.