Ferromagnetism and heavy fermion semiconductor-like behavior in UFe0.6Sb2 single crystals
Ferromagnetism and heavy fermion semiconductor-like behavior in UFe0.6Sb2 single crystals
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UFe0.6Sb2 单晶中的铁磁性和类重费米子半导体行为
DOI：
10.1016/j.jallcom.2015.12.188
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发表时间：
2016-04-05
影响因子：
6.2
通讯作者：
Lai, Xinchun
中科院分区：
文献类型：
--
作者：
Xie, Donghua;Zhang, Wen;Lai, Xinchun
用X射线衍射法、磁化率、电阻率和比热等方法研究了Sb助熔剂法生长的UFe0.6Sb2单晶。UFe0.6Sb2为四方HfCuSi2型结构(空间群P4/NMM)。UFe0.6Sb2在T-C=28K时发生铁磁相变，其易轴沿c轴。电阻率类似于重费米子半导体的行为，意味着在两个方向上都形成了三个伪隙。在9-30K范围内形成的一个赝隙是由于Fe位的部分占据而形成的杂质态，它可以通过施加强磁场来闭合。然而，磁场对另外两个伪隙几乎没有影响。较大的电子比热系数Gamma=233MJ/mol.K-2表明该化合物是一种强电子相关材料。(C)2016爱思唯尔B.V.保留所有权利。
Single crystals of UFe0.6Sb2 grown by Sb flux method have been investigated by means of X-ray diffraction, magnetic susceptibility, electrical resistivity and specific heat. UFe0.6Sb2 crystallizes in the tetragonal HfCuSi2-type structure (space group P4/nmm). UFe0.6Sb2 undergoes a ferromagnetic transition at T-C = 28 K with an easy axis along the c-axis. The resistivity resembles heavy fermion semiconducting-like behavior and implies three pseudogaps are formed in both directions. One pseudogap formed in the range of 9-30 K originates from states of impurity due to the partial occupancies of the Fe sites, and it can be closed by applying high magnetic field. The magnetic field, however, has little effects on the other two pseudogaps. A large electronic specific heat coefficient gamma = 233 mJ/mol.K-2 reveals this compound is a strong electron correlation material. (C) 2016 Elsevier B.V. All rights reserved.