Quantum dot structures grown on Al containing quaternary material for infrared photodetection beyond 10μm
Quantum dot structures grown on Al containing quaternary material for infrared photodetection beyond 10μm
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在含铝四元材料上生长的量子点结构用于超过 10μm 的红外光电检测
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
N. Studart
中科院分区：
文献类型：
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作者：
P. L. Souza;A. J. Lopes;T. Gebhard;K. Unterrainer;M. Pires;J. Villas;G. S. Vieira;P. Guimarães;N. Studart
研究了在与InP晶格匹配的InGaAlAs上生长的不同结构的InAs量子点用于量子点红外探测器。观察到非常窄的光电流峰，表现出优良的波长选择的巨大潜力。研制了能探测10μm以上辐射的结构。偏振相关性测量表明，该结构具有零维特性，适合于垂直入射光的检测。另一方面，包含耦合量子威尔斯的结构表现出混合的二维/零维行为。
Different InAs quantum dot structures grown on InGaAlAs lattice matched to InP were investigated for quantum dot infrared photodetectors. Extremely narrow photocurrent peaks were observed, demonstrating great potential for fine wavelength selection. Structures which can detect radiation beyond 10μm were developed. Polarization dependence measurements showed that the structures have a zero-dimensional character and are suitable for detection of normal incident light. On the other hand, structures containing coupled quantum wells showed a hybrid two-dimensional/zero-dimensional behavior.