Exciton-phonon and exciton-exciton interactions in GaAs by time-resolved optical reflectivity
Exciton-phonon and exciton-exciton interactions in GaAs by time-resolved optical reflectivity
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DOI：
10.1016/j.rinp.2018.12.094
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发表时间：
2019-03
影响因子：
5.3
通讯作者：
X. Nie;Haiyun Liu;Xiu Zhang;Cong-Ying Jiang;Shi-Zhong Zhao;Quanliang Zhao;Fan Li;Lili Yue;J. Meng;Yu-Xia Duan;Shibing Liu
中科院分区：
文献类型：
--
作者：
X. Nie;Haiyun Liu;Xiu Zhang;Cong-Ying Jiang;Shi-Zhong Zhao;Quanliang Zhao;Fan Li;Lili Yue;J. Meng;Yu-Xia Duan;Shibing Liu
We present the study of the ultrafast carrier dynamics in bulk GaAs at 6 K, by time-resolved optical reflectivity in a wide range of excitation densities. We observe an exciton-phonon interaction at low excitation densities, in terms of a mono-exponential relaxation. Further increase of excitation density above a critical value n c, stimulates a bi-exponential relaxation in which the fast one is added owing to an exciton-exciton scattering channel. Our results reveal n c∼ 2× 10 24 photons/m 3, about an order of magnitude higher than the Mott density previously determined by photoluminescence and terahertz spectroscopy measurements and theoretical calculations.
