Carbon self-doping induced high electronic conductivity and photoreactivity of g-C3N4
Carbon self-doping induced high electronic conductivity and photoreactivity of g-C3N4
复制标题
碳自掺杂诱导g-C3N4的高电子电导率和光反应性
DOI：
10.1039/c2cc32181e
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发表时间：
2012-01-01
影响因子：
4.9
通讯作者：
Zhang, Lizhi
中科院分区：
文献类型：
--
作者：
Dong, Guohui;Zhao, Kun;Zhang, Lizhi
我们从理论和实验上证明，碳自掺杂可以通过形成离域大π键来诱导g-C3N4的本然电子和能带结构发生变化，从而增加可见光吸收和电导率以及比表面积，从而增强光氧化和光还原活性。
We theoretically and experimentally demonstrate that carbon self-doping could induce intrinsic electronic and band structure change of g-C3N4 via the formation of delocalized big pi bonds to increase visible light absorption and electrical conductivity as well as surface area and thus enhance both photooxidation and photoreduction activities.