Influences of planar source thickness on betavoltaics with different semiconductors
Influences of planar source thickness on betavoltaics with different semiconductors
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DOI：
10.1007/s10967-014-3879-2
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发表时间：
2015-01
影响因子：
1.6
通讯作者：
Yunpeng Liu;Xiaobin Tang;Zhiheng Xu;Liang Hong;Hao Wang;Min Liu;Da Chen
中科院分区：
文献类型：
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作者：
Yunpeng Liu;Xiaobin Tang;Zhiheng Xu;Liang Hong;Hao Wang;Min Liu;Da Chen
利用MCNP 5和Schottky方程计算了不同厚度和不同表观活度密度的63 Ni和147 Pm β晶体的总效率（ηtotal）和转换效率（η）极限。视活度密度、平均发射能量和η极限随源厚度的增加而增加并达到饱和水平。随着禁带宽度的增加，η极限的增加速率越来越小。宽带隙半导体比窄带隙半导体更快地使η达到饱和，η total达到最大值。~（147）Pm的η极限高于~（63）Ni。测量结果表明，高的表观活度密度可以提高η。本研究可作为评价β-内酰胺类药物性能的参考。
Employing63Ni and147Pm with different thicknesses and apparent activity densities, we calculated the total efficiency (ηtotal) and conversion efficiency (η) limits of betavoltaics by MCNP5 and Schottky equation. The apparent activity density, emitted average energy, andηlimit increase and then reach their saturation levels with increasing source thickness. The increment rate ofηlimit increasingly smaller as the bandgap increases. Wide bandgap semiconductors leadηto reach saturation andηtotalto reach maximum more quickly than narrow ones. The limit ofηfor147Pm is higher than that for63Ni. Measurement results demonstrate that high apparent activity density can improveηas expected. This study can serve as a reference to evaluate the performance of betavoltaics.