Temperature dependence of the intrinsic and extrinsic contributions in BiFeO3-(K0.5Bi0.5)TiO3-PbTiO3 piezoelectric ceramics
Temperature dependence of the intrinsic and extrinsic contributions in BiFeO3-(K0.5Bi0.5)TiO3-PbTiO3 piezoelectric ceramics
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DOI：
10.1063/1.4894443
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发表时间：
2014-09-07
影响因子：
3.2
通讯作者：
Comyn, T. P.
中科院分区：
文献类型：
--
作者：
Bennett, J.;Shrout, T. R.;Comyn, T. P.
This contribution focuses on the use of modified Rayleigh law as a technique for determining the intrinsic and extrinsic (reversible/irreversible) contributions to the piezoelectric effect up to 150 degrees C across a broad compositional space, augmenting previous understanding of the BiFeO3(K0.5Bi0.5)TiO3-PbTiO3 system. At room temperature, a mechanistic explanation of the correlation between crystal symmetry, i.e., tetragonal spontaneous strain, x(s), and the Rayleigh relations using Landau theory is provided. The intrinsic response was found to be heavily dependent upon the tetragonal x(s), whereby an optimisation between polarization and permittivity was elucidated, leading to enhanced piezoelectric charge coefficients. A c/a ratio of similar to 1.041 was identified at which the room temperature intrinsic and extrinsic effects were at a maximum; a d(init) of 183 x 10(-12) m/V and Rayleigh coefficient of 59 x 10(-18) m(2)/V-2 were measured, resulting in the largest piezoelectric charge coefficients. The piezoelectric charge coefficient d(33), intrinsic and extrinsic contributions of these materials were all found to increase up to 150 degrees C while adhering to the Rayleigh model. The reversible extrinsic component of the total reversible response, d(init), was calculated to be relatively minor, 4.9% at room temperature, increasing to 12.1% at 150 degrees C, signifying its increasing influence to the piezoelectric effect, as domain wall motion is thermally activated. Hence, the phenomenological interpretation provided here may be used as a roadmap to elucidate the origins of the temperature dependence of the piezoelectric effect. (C) 2014 AIP Publishing LLC.
