Generation of P[sub b] Centers by High Electric Fields: Thermochemical Effects
Generation of P[sub b] Centers by High Electric Fields: Thermochemical Effects
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高电场产生 P[sub b] 中心：热化学效应
DOI：
10.1149/1.2097511
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发表时间：
1989
影响因子：
3.9
通讯作者：
N. Johnson
中科院分区：
文献类型：
--
作者：
G. Gerardi;E. Poindexter;P. Caplan;M. Harmatz;W. Buchwald;N. Johnson
用电子自旋共振（ESR）研究了负电晕电荷产生P{sub b}中心。发现P{sub b}中心的形成在大约25秒内达到饱和。在含有0.1% H{sub 2}O的环境中氧化的样品，电晕产生效应最大，而在干燥或蒸汽生长的氧化物中消失。温和的氧化后退火也可以在这些样品中产生P{sub b}，并且在显示电晕效应的样品中，这种热生成的活化能最低。已发现长时间退火可钝化现有的P{sub b}，并最终产生一个非常耐电晕钝化的界面。提出P{sub b}的产生是由于负场中Si体的空穴吸引界面Si-H键减弱，随后附近的H{sub 2}O分子迅速抽离和捕获质子，生成H{sub 3}O{sup +}和P{sub b}。电容-电压曲线呈现出平带位移和拉伸，表明氧化正电荷和界面态的产生。
The generation of P{sub b} centers by negative corona charging has been examined by electron spin resonance (ESR). Formation of P{sub b} centers has been found to saturate in about 25s. The corona-generation effect is maximized for samples oxidized in ambients containing about 0.1% H{sub 2}O, and disappears with dry or steam-growth oxides. Mild postoxidation anneals can also generate P{sub b} in these samples, and the activation energy for this thermal generation is lowest for samples showing the corona effect. Prolonged anneals have been found to passivate existing P{sub b} and, ultimately, to produce an interface that is very resistant to corona depassivation. It is proposed that the P{sub b} generation is due to weakening of the interface Si-H bond by attraction of a hole from the Si bulk in the negative field, followed by prompt abstraction and capture of a proton by a nearby H{sub 2}O molecule to yield H{sub 3}O{sup +} and P{sub b}. Capacitance-voltage curves show flatband shifts and stretchout, which indicate the generation of positive oxide charge and interface states.