Thickness Effects on Crystal Growth and Metal–Insulator Transition in Rutile‐Type RuO2 (100) Thin Films
Thickness Effects on Crystal Growth and Metal–Insulator Transition in Rutile‐Type RuO2 (100) Thin Films
复制标题
厚度对金红石型 RuO2 (100) 薄膜晶体生长和金属-绝缘体转变的影响
DOI：
10.1002/pssb.202000188
复制
发表时间：
2020
期刊：
影响因子：
--
通讯作者：
T. Fukumura
中科院分区：
文献类型：
--
作者：
D. Kutsuzawa;D. Oka;T. Fukumura
研究了金红石型RuO 2（100）薄膜的晶体结构和电学性能随厚度的变化关系。岛状生长模式导致随着厚度的增加沿a轴从负到正沿着单调变化的晶格应变。厚度减小到20 nm以下会大幅增加电阻率，导致类似绝缘的行为。较厚的膜的金属行为很好地解释了修改后的布洛赫-Grüneisen函数在散装RuO 2，其中的应变有显着的导电参数的影响。薄膜的类绝缘行为被归因于2D局域化和Mott可变范围跳跃，反映了尺寸和生长模式对导电的影响。
The thickness dependence of crystal structure and electrical properties is studied for rutile‐type RuO2 (100) thin films. The island growth mode results in a monotonically varying lattice strain along the a‐axis from negative to positive with increasing thickness. Decrease in the thickness below 20 nm increases the resistivity drastically, resulting in insulating‐like behaviors. The metallic behaviors of the thicker films are well explained by the modified Bloch–Grüneisen function as in bulk RuO2, where the strain has a significant influence on the conduction parameters. The insulating‐like behaviors of the thinner films are assigned to 2D localization and Mott variable range hopping, reflecting the effects of the size and growth mode on electrical conduction.