Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive
Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth Additive
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使用 HCl 作为生长添加剂提高 SiC CVD 反应器中的生长速率
DOI：
10.4028/www.scientific.net/msf.483-485.73
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
S. Saddow
中科院分区：
文献类型：
--
作者：
R. Myers;O. Kordina;Z. Shishkin;S. Rao;Richard Everly;S. Saddow
将氯化氢（HCl）作为添加气体添加到标准SiC外延生长工艺中。使用硅烷和丙烷前体以及氢载气的低压热壁CVD反应器用于这些实验。有人提出，加入HCl抑制Si簇形成在气相中，也可能优先蚀刻低结晶质量的材料。使用HCl添加剂的生长的确切机制仍在研究中，然而，当向流中添加HCl时，可以获得更高的生长速率并且表面得到改善。用扫描电镜和原子力显微镜研究了薄膜的形貌，用低温光致发光分析了薄膜的质量。
Hydrogen chloride (HCl) was added to a standard SiC epitaxial growth process as an additive gas. A low-pressure, hot-wall CVD reactor, using silane and propane precursors and a hydrogen carrier gas, was used for these experiments. It is proposed that the addition of HCl suppresses Si cluster formation in the gas phase, and possibly also preferentially etches material of low crystalline quality. The exact mechanism of the growth using an HCl additive is still under investigation, however, higher growth rates could be obtained and the surfaces were improved when HCl was added to the flow. The film morphology was studied using SEM and AFM and the quality with LTPL analysis, which are reported.