AlInN/GaN a suitable HEMT device for extremely high power high frequency applications
AlInN/GaN a suitable HEMT device for extremely high power high frequency applications
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AlInN/GaN 是适合极高功率高频应用的 HEMT 器件
DOI：
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发表时间：
2007
期刊：
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通讯作者：
E. Kohn
中科院分区：
文献类型：
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作者：
C. Gaquière;F. Medjdoub;J. Carlin;S. Vandenbrouck;E. Delos;E. Feltin;N. Grandjean;E. Kohn
蓝宝石衬底上的 AlInN/GaN 未钝化高电子迁移率晶体管 (HEMT) 在稳态下产生接近 2 A/mm 的最大漏极电流密度。由于可以使用超薄势垒层，同时保持极高的片载流子密度，因此可以观察到比 AlGaN/GaN 器件更优越的栅极长度缩减。对于 0.08 μm 栅极长度器件，我们达到了 70 GHz 的外在电流增益截止频率。大信号测量显示射频功率色散相对较低。事实上，我们首次在 10 GHz 频率下对这种 HEMT 结构进行功率测量。尽管蓝宝石基板导致强烈的热效应、肖特基二极管特性中的大漏电流以及低缓冲层电阻率，但我们在低偏置条件（VDS = 15V）下实现了 1.5 W/mm 的输出功率密度，与预期功率一致。这些结果证明了这种结构对于极高功率高频应用的巨大潜力。
AlInN/GaN unpassivated high electron mobility transistor (HEMT) on sapphire substrate has yielded a maximum drain current density close to 2 A/mm in steady state. Superior gate length downscaling than AlGaN/GaN devices has been observed owing to the possibility of the use of ultra thin barrier layer while keeping extremely high sheet carrier density. We reached an extrinsic current gain cut-off frequency of 70 GHz for a 0.08 mum gate length device. Large signal measurements reveal a relatively low RF power dispersion. Indeed, at 10 GHz we performed for the first time power measurements on such a HEMT structure. We achieved 1.5 W/mm output power density at low bias condition (VDS = 15V) in agreement with the expected power in spite of a strong thermal effect due to the sapphire substrate, a large leakage current in the Schottky diode characteristic and a low buffer layer resistivity. These results demonstrate the great potential of this structure for extremely high power high frequency applications.