Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays
Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays
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DOI：
10.1088/0957-4484/16/12/029
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发表时间：
2005-12-01
期刊：
影响因子：
3.5
通讯作者：
Fukui, T
中科院分区：
文献类型：
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作者：
Mohan, P;Motohisa, J;Fukui, T
我们报告的系统控制生长的InP纳米线阵列的无催化剂的选择性区域金属有机气相外延部分掩蔽的InP（1 I1）A衬底。通过仔细选择生长条件和掩模图案化，精确控制纳米线的长度、直径、形状和位置。操纵的生长条件也使我们能够故意定义的纳米线生长沿着轴向或径向方向，这具有显着的潜力，实现新颖的纳米结构。透射电子显微镜的研究表明，生长的InP纳米线是单晶的纤锌矿晶体结构和在4 K下进行的InP纳米线阵列的光致发光的研究揭示了一个单一的强烈的发射峰与一个显着的蓝移。因此，受控的制造使得纳米线能够以高度均匀的方式实现为可再现的相同结构，并且在预定配置中具有完美的定位，使得它们非常适合于实际集成到纳米器件中。
We report on the systematically controlled growth of InP nanowire arrays by catalyst-free selective area metalorganic vapour phase epitaxy on partially masked InP(1 I 1)A substrates. The length, diameter, shape and position of the nanowires were precisely controlled by careful choice of the growth conditions and mask patterning. Manipulation of the growth conditions also enabled us to deliberately define the nanowire growth along either the axial or the radial direction, which has significant potential for the realization of novel nanostructures. Transmission electron microscopy studies revealed that the InP nanowires grown were single-crystalline with wurtzite crystal structure and the photoluminescence studies carried out at 4 K on InP nanowire arrays revealed a single intense emission peak with a significant blueshift. The controlled fabrication thus enabled the nanowires to be realized in a highly uniform manner as reproducibly identical structures and with perfect positioning in predetermined configurations, making them highly suitable for practical integration into nanodevices.