Development of transition edge sensors for the detection of secondary electrons
Development of transition edge sensors for the detection of secondary electrons
复制标题
开发用于检测二次电子的过渡边缘传感器
DOI：
10.1109/tasc.2023.3264501
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发表时间：
2023
影响因子：
1.8
通讯作者：
Jodoi Takeshi
中科院分区：
文献类型：
--
作者：
Smith Ryan;Takahashi Hiroyuki;Mitsuya Yuki;Jodoi Takeshi
当碳离子通过人体时产生的二次电子被认为在破坏癌细胞DNA方面发挥着主要作用。为了充分理解碳离子的作用机制，对这些电子的能量和行为进行实验和定量分析是很重要的。因此，我们已经开始了用于探测二次电子的TES阵列的开发。通过使用Geant4进行模拟，我们已经证实了TES的超导薄膜能够阻止电子。我们还发现，较高能量的二次电子可能会对能量低于100 eV的电子的能谱产生影响。我们目前正在制造一个用于探测电子的2像素TES阵列的原型。
Secondary electrons generated when carbon ions go through the body are considered to be playing a major role in damaging the DNA of cancerous cells. To fully understand the mechanism of carbon ions, experimental and quantitative analysis on the energy and the behavior of these electrons are important. Therefore, we have started the development of TES arrays for the detection of secondary electrons. By performing simulations using Geant4, we have confirmed that the superconducting thin film of a TES is able to stop the electrons. We have also found that relatively high energy secondary electrons might have an influence on the energy spectrum of electrons having energies lower than 100 eV. We are currently fabricating a prototype 2-pixel TES array for the detection of electrons.