Transport properties of single-crystalline Ising magnet SmPt2Si2
Transport properties of single-crystalline Ising magnet SmPt2Si2
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单晶伊辛磁体SmPt2Si2的输运特性
DOI：
10.1088/1742-6596/683/1/012033
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
and Yuji Aoki
中科院分区：
文献类型：
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作者：
Kengo Fushiya;Tatsuma D. Matsuda;Ryuji Higashinaka;and Yuji Aoki
测量了SmPt 2Si 2单晶的电子输运性质，在低于TI = 5.1K时，磁无序（顺磁）Sm离子将部分保持反铁磁（AFM）有序状态.在顺磁状态下，电阻率表现出一个浅的最小值在1011 K和一个明显的负磁阻，表明近藤效应和/或AFM短程有序的发生。低于T1，电阻率急剧增加，表明由与AFM转变相关的超区间隙形成引起的载流子密度降低。至于霍尔效应，非常分量比正常分量小得可以忽略不计。正常霍尔系数的正号表明空穴费米面主导电输运性质。讨论了两种有序相的输运性质的差异。
The electronic transport properties of a SmPt 2 Si 2 single crystal are measured, in which magnetically disordered (paramagnetic) Sm ions are expected to remain partially in the antiferromagnetically (AFM) ordered state occurring below T I= 5.1 K. In the paramagnetic state, the resistivity exhibits a shallow minimum at∼ 11 K and a pronounced negative magnetoresistance, suggesting the occurrence of the Kondo effect and/or AFM short-range ordering. Below T I, the resistivity increases sharply, indicating a decrease in the carrier density caused by a superzone gap formation associated with the AFM transition. As regards the Hall effect, the extraordinary component is negligibly smaller than the normal component. The positive sign of the normal Hall coefficient indicates that the hole Fermi surfaces dominate the electrical transport properties. The difference in the transport properties of the two ordered phases is discussed.