Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness
Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness
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DOI：
10.1063/1.4947445
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发表时间：
2016-04-16
影响因子：
4
通讯作者：
Eymery, Joel
中科院分区：
文献类型：
--
作者：
Mukhtarova, Anna;Valdueza-Felip, Sirona;Eymery, Joel
我们研究了赝晶In0.1Ga0.9N/GaN多量子阱（MQW）太阳能电池的光伏性能与有源区总厚度的关系。威尔斯的数量从5增加到40改善了短路电流和开路电压，导致总转换效率的10倍增强。进一步增加威尔斯的数量会导致由于有源区的不完全耗尽而引起的载流子收集损失。电容-电压测量指向MQW区域中的48 nm的空穴扩散长度。出版社：AIP Publishing
We investigate the photovoltaic performance of pseudomorphic In0.1Ga0.9N/GaN multiple-quantum well (MQW) solar cells as a function of the total active region thickness. An increase in the number of wells from 5 to 40 improves the short-circuit current and the open-circuit voltage, resulting in a 10-fold enhancement of the overall conversion efficiency. Further increasing the number of wells leads to carrier collection losses due to an incomplete depletion of the active region. Capacitance-voltage measurements point to a hole diffusion length of 48 nm in the MQW region. Published by AIP Publishing.