Preparation of γ-Al2O3 films by laser chemical vapor deposition
Preparation of γ-Al2O3 films by laser chemical vapor deposition
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DOI:
10.1016/j.apsusc.2015.02.196
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发表时间:
2015-06-15
影响因子:
6.7
通讯作者:
Goto, Takashi
中科院分区:
文献类型:
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作者:
Gao, Ming;Ito, Akihiko;Goto, Takashi
gamma- and alpha-Al2O3 films were prepared by chemical vapor deposition using CO2, Nd:YAG, and InGaAs lasers to investigate the effects of varying the laser wavelength and deposition conditions on the phase composition and microstructure. The CO2 laser was found to mostly produce alpha-Al2O3 films, whereas the Nd:YAG and InGaAs lasers produced gamma-Al2O3 films when used at a high total pressure. gamma-Al2O3 films had a cauliflower-like structure, while the alpha-Al2O3 films had a dense and columnar structure. Of the three lasers, it was the Nd:YAG laser that interacted most with intermediate gas species. This promoted gamma-Al2O3 nucleation in the gas phase at high total pressure, which explains the cauliflower-like structure of nanoparticles observed. (C) 2015 Elsevier B.V. All rights reserved.