Excitonic energies and inhomogeneous line broadening effects in InAlAs/InGaAs modulator structures
Excitonic energies and inhomogeneous line broadening effects in InAlAs/InGaAs modulator structures
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InAlAs/InGaAs 调制器结构中的激子能量和不均匀线展宽效应
DOI：
10.1063/1.339539
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发表时间：
1987
影响因子：
3.2
通讯作者：
J. Singh
中科院分区：
文献类型：
--
作者：
Songcheol Hong;J. Singh
研究了在静态横向电场作用下In0.52Al0.48As/In0.53Ga0.47As量子阱中的激子问题。我们报告的激子的大小，结合能，和发射能量的变化作为电场和阱尺寸的函数的结果。计算了由于界面粗糙度和合金无序引起的激子谱线非均匀展宽。发现阱区和势垒区中的合金无序是非常重要的，并且其控制可能是该系统作为高效率调制器的性能的关键。
The exciton problem in the In0.52Al0.48As/In0.53Ga0.47As quantum well in the presence of static transverse electric field is studied. We report results on variation of exciton size, binding energies, and emission energies as a function of electric field and well size. Inhomogeneous line broadening of exciton lines due to interface roughness and alloy disorder is also calculated. Alloy disorder in the well and barrier regions is found to be very important and its control may be critical in the performance of this system as a high efficiency modulator.