Radiation-Induced Error Mitigation by Read-Retry Technique for MLC 3-D NAND Flash Memory
Radiation-Induced Error Mitigation by Read-Retry Technique for MLC 3-D NAND Flash Memory
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DOI：
10.1109/tns.2021.3052909
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发表时间：
2021-01
影响因子：
1.8
通讯作者：
P. Kumari;U. Surendranathan;M. Wasiolek;K. Hattar;N. Bhat;B. Ray
中科院分区：
文献类型：
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作者：
P. Kumari;U. Surendranathan;M. Wasiolek;K. Hattar;N. Bhat;B. Ray
在这篇文章中，我们已经评估了读-擦除（RR）功能的3-D NAND芯片的多级单元（MLC）配置后，总电离剂量（TID）曝光。RR功能通常在高密度最先进的NAND存储器芯片中提供，以便在默认存储器读取方法无法使用纠错码（ECC）纠正数据时恢复数据。在这项工作中，我们已经应用RR方法照射的3-D NAND芯片，暴露与Co-60 γ射线源TID高达50 krad（Si）。基于我们的实验评估结果，我们提出了一种算法，有效地实现RR方法，以扩展NAND存储器芯片的辐射耐受性。我们的实验评估表明，RR方法加上ECC可以确保MLC 3-D NAND的TID高达50 krad（Si）的数据完整性。
In this article, we have evaluated the Read-Retry (RR) functionality of the 3-D NAND chip of multilevel-cell (MLC) configuration after total ionization dose (TID) exposure. The RR function is typically offered in the high-density state-of-the-art NAND memory chips to recover data once the default memory read method fails to correct data with error correction codes (ECCs). In this work, we have applied the RR method on the irradiated 3-D NAND chip that was exposed with a Co-60 gamma-ray source for TID up to 50 krad (Si). Based on our experimental evaluation results, we have proposed an algorithm to efficiently implement the RR method to extend the radiation tolerance of the NAND memory chip. Our experimental evaluation shows that the RR method coupled with ECC can ensure data integrity of MLC 3-D NAND for TID up to 50 krad (Si).