In-crystal and surface charge transport of electric-field-induced carriers in organic single-crystal semiconductors.
In-crystal and surface charge transport of electric-field-induced carriers in organic single-crystal semiconductors.
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DOI：
10.1103/physrevlett.98.196804
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发表时间：
2007-05
影响因子：
8.6
通讯作者：
J. Takeya;J. Kato;K. Hara;M. Yamagishi;R. Hirahara;K. Yamada;Y. Nakazawa;S. Ikehata;K. Tsukagosh
中科院分区：
文献类型：
--
作者：
J. Takeya;J. Kato;K. Hara;M. Yamagishi;R. Hirahara;K. Yamada;Y. Nakazawa;S. Ikehata;K. Tsukagosh
在红荧烯单晶的高性能场效应晶体管中，通过同时检测纵向电导率σ（平方）和霍尔系数R（H）来测量载流子迁移率的栅电压依赖性。当相对低密度的载流子（<10（11）cm（-2））分布到晶体中时，霍尔迁移率μ（H）（与σ（平方）R（H）相同）达到近10 cm（2）/Vs。μ（H）随着较高密度的载流子而迅速减小，因为它们基本上被限制在表面并且受到非晶栅极绝缘体的随机性的影响。实现有机晶体管器件高载流子迁移率的机制涉及高纯度有机晶体的本征半导体特性和体中扩散带状载流子输运。
Gate-voltage dependence of carrier mobility is measured in high-performance field-effect transistors of rubrene single crystals by simultaneous detection of the longitudinal conductivity sigma(square) and Hall coefficient R(H). The Hall mobility mu(H) (identical with sigma(square)R(H)) reaches nearly 10 cm(2)/V s when relatively low-density carriers (<10(11) cm(-2)) distribute into the crystal. mu(H) rapidly decreases with higher-density carriers as they are essentially confined to the surface and are subjected to randomness of the amorphous gate insulators. The mechanism to realize high carrier mobility in the organic transistor devices involves intrinsic-semiconductor character of the high-purity organic crystals and diffusive bandlike carrier transport in the bulk.