A static induction device manufactured by silicon direct bonding
A static induction device manufactured by silicon direct bonding
复制标题
一种硅直接键合制造的静电感应器件
DOI：
10.1088/0268-1242/19/7/006
复制
发表时间：
2004
期刊：
影响因子：
--
通讯作者：
Qing
中科院分区：
文献类型：
--
作者：
Xian'an Chen;Su Liu;Qing
如何提高静电感应器件的栅源击穿电压一直是制造过程中的一个关键问题。采用硅直接键合工艺取代高电阻率外延工艺，形成键合埋栅结构，不同于外延埋栅结构。新结构从工艺和结构两方面提高了栅源击穿电压。通过制造静态感应晶闸管，表明键合埋栅结构是一种很有前途的结构，可以提高器件的VGK和其他性能。
It is always a key problem how to improve the gate–source breakdown voltage (VGK) of static induction devices during manufacturing. By using a silicon direct bonding process to replace the high resistivity epitaxy process, a bonding buried gate structure is formed, which is different from an epitaxy buried gate structure. The new structure can improve the gate–source breakdown voltage from the process and the structure. It is shown that the bonding buried gate structure is a promising structure, that can improve the VGK and other performances of devices, by manufacture of a static induction thyristor.