Converting Metallic Single-Walled Carbon Nanotnbes into Semiconductors by Boron/Nitrogen Co-Doping
Converting Metallic Single-Walled Carbon Nanotnbes into Semiconductors by Boron/Nitrogen Co-Doping
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通过硼/氮共掺杂将金属单壁碳纳米管转化为半导体
DOI：
10.1002/adma.200800830
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发表时间：
2008-10-02
影响因子：
29.4
通讯作者：
Dai, Hongjie
中科院分区：
文献类型：
--
作者：
Xu, Zhi;Lu, Wengang;Dai, Hongjie
对硼/氮共掺杂单壁碳纳米管（BCN-SWNTs）的电子输运性质进行了测量，以确定其金属性或半导体性。从大量的BCN-SWNT基场效应晶体管获得的结果表明，生长的BCN-SWNT是纯半导体的，而未掺杂的C-SWNT仅由约70%的半导体纳米管组成。
Electronic transport measurements on boron/nitrogen co-doped single-walled carbon nanotubes (BCN-SWNTs) have been performed to determine their metallic or semiconducting character. The results obtained from a large number of BCN-SWNT-based field-effect transistors indicate that the as-grown BCN-SWNTs are purely semiconducting, while the undoped C-SWNTs consist of only about 70% semiconducting nanotubes.