A 0.45-THz 2-D Scalable Radiator Array With 28.2-dBm EIRP Using an Elliptical Teflon Lens
A 0.45-THz 2-D Scalable Radiator Array With 28.2-dBm EIRP Using an Elliptical Teflon Lens
复制标题
使用椭圆形聚四氟乙烯透镜且具有 28.2dBm EIRP 的 0.45THz 二维可扩展辐射器阵列
DOI：
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发表时间：
2022
影响因子：
5.4
通讯作者：
C. Chan
中科院分区：
文献类型：
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作者：
Liang Gao;C. Chan
本文提出了一种新型的相干可扩展辐射阵列，通过对太赫兹发电和辐射的协同设计和优化方法，在400 GHz以上的硅基可扩展太赫兹源中实现了最高的有效各向同性辐射功率（EIRP）和最高的直流-太赫兹（THz）效率。首先，优化了硅衬底负载的4 $ times $ 4缝隙天线阵列，以获得高辐射效率和良好的辐射方向图，而无需硅透镜。一个低成本的聚四氟乙烯透镜被引入，并有效地照亮了散热器实现高度定向光束。其次，提出了一种新的二维可伸缩耦合谐振子阵列作为激励网络馈电天线阵列。该振荡器针对二次谐波产生进行了优化，以提供高输出功率和效率。该芯片采用65纳米CMOS工艺制造，芯片的核心面积为0.55 mm2。在1.2 v电源电压下，449.8 GHz频率下的辐射功率为−2.4 dBm， EIRP为8.8 dBm，直流功耗为373 mw， dc-to- thz效率为0.16%。通过增加椭圆聚四氟乙烯透镜，在1.2 v供电电压下，在452.3 GHz处测得28.2 dBm的EIRP，在1.4 v供电电压下，在458.3 GHz处测得29.1 dBm的最大EIRP。通过改变偏置电压和电源电压，可以实现4.6%的频率调谐范围。在452.3 GHz时，测量到的相位噪声为- 76.4 dBc/Hz，偏移量为1mhz。
This article presents a novel coherent, scalable radiator array achieving the highest effective isotropic radiated power (EIRP) and highest dc-to-terahertz (THz) efficiency among silicon-based scalable THz sources beyond 400 GHz through co-design and optimization methods of the THz power generation and radiation. First, a 4 $ imes $ 4 slot antenna array with silicon substrate loading is optimized for high radiation efficiency and good radiation pattern without silicon lens. A low-cost Teflon lens is introduced and effectively illuminated by the radiator achieving a highly directive beam. Second, a novel 2-D scalable coupled harmonic oscillator array is proposed as the excitation network to feed the antenna array. The oscillator is optimized for the second-harmonic generation to provide high output power and efficiency. The chip is fabricated in a 65-nm CMOS process, and the core area of the chip is 0.55 mm2. The radiated power of −2.4 dBm and 8.8-dBm EIRP are achieved at 449.8 GHz with 373-mW dc power consumption and 0.16% dc-to-THz efficiency under 1.2-V supply voltage. By adding an elliptical Teflon lens, 28.2-dBm EIRP is measured at 452.3 GHz under 1.2-V supply voltage, and a maximum EIRP of 29.1 dBm is measured at 458.3 GHz with 1.4-V supply voltage. By changing the bias and supply voltages, a 4.6% frequency tuning range is achieved. At 452.3 GHz, the measured phase noise is −76.4 dBc/Hz at 1-MHz offset.