Area-selective deposition of self-assembled monolayers on SiO2∕Si(100) patterns
Area-selective deposition of self-assembled monolayers on SiO2∕Si(100) patterns
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DOI：
10.1063/1.2400114
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发表时间：
2006-12
影响因子：
4
通讯作者：
Changshun Wang;Xu Pan;Cunying Sun;T. Urisu
中科院分区：
文献类型：
--
作者：
Changshun Wang;Xu Pan;Cunying Sun;T. Urisu
在SiO2 scinSi（100）的图案上已经证明了自组装单分子膜（SAMs）的区域选择性沉积。该图形是通过同步辐射辐照刻蚀Si衬底上的SiO2薄膜制备的。使用不同类型的掩模获得了几种图案。十二烯SAM沉积在Si表面和十八烷基三氯硅烷SAM沉积在SiO2表面。沉积的自组装膜被密集包装和有序的红外光谱，椭圆偏振仪，和水接触角测量。
Area-selective deposition of self-assembled monolayers (SAMs) has been demonstrated on patterns of SiO2∕Si(100). The pattern was fabricated by synchrotron radiation stimulated etching of SiO2 thin films on Si substrate. Several kinds of the patterns were obtained with different types of masks. A dodecene SAM was deposited on Si surface and an octadecyltrichlorosilane SAM was deposited on SiO2 surface. The deposited SAMs were densely packed and well ordered characterized by infrared spectroscopy, ellipsometry, and water contact angle measurements.