Fabrication of Surface Acoustic Wave-Semiconductor Coupled Devices Using Epitaxial Lift-Off Technology
Fabrication of Surface Acoustic Wave-Semiconductor Coupled Devices Using Epitaxial Lift-Off Technology
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利用外延剥离技术制造表面声波半导体耦合器件
DOI：
10.1109/ultsym.1995.495607
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
K. Hohkawa
中科院分区：
文献类型：
--
作者：
C. Hong;K. Koh;C. Kaneshiro;Y. Aoki;K. Hohkawa
在本文中，我们报告了利用外延提升（ELO）和薄膜键合技术制造表面声波-半导体耦合器件的研究结果。为了实现半导体薄膜与压电衬底之间坚固的键合界面，我们研究了1)控制GaAs薄膜应力的最佳条件，2)减少GaAs薄膜的释放时间，3)增强薄膜与LiNbO3衬底之间的结合力。实验结果表明，这些工艺改进对于制作具有AlGaAs/LiNbO3结构的功能器件是有效的。
In this paper, we report the results of a study on the fabrication process of surface acoustic wave-semiconductor coupled devices, using epitaxial lift-off (ELO) and thin-film bonding technology. In order to realize a rugged bonding interface between the semiconductor film and piezoelectric substrate, we studied the 1) optimum conditions controlling stress in GaAs films, 2) reduction of releasing time for GaAs films, 3) and enhancement of bonding force between the film and LiNbO3 substrate. The experimental results clarified that these process improvements were effective for fabricating functional devices with the AlGaAs/LiNbO3 structure.