A Reliable Distributed Modeling Approach Applied to High-Frequency Transistors
A Reliable Distributed Modeling Approach Applied to High-Frequency Transistors
复制标题
应用于高频晶体管的可靠分布式建模方法
DOI：
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发表时间：
2020
期刊：
影响因子：
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通讯作者：
S. El
中科院分区：
文献类型：
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作者：
Amirreza Ghadimi Avval;S. El
提出了一种新的用于晶体管高频分析的分布式小信号建模方法，其中每个参数的提取方法仅基于器件的结构来定义。提出了一种无条件稳定的隐式方案来分析器件的时域行为，并将所得结果与0.1 μm N极性GaN MISHEMT在宽频率范围内的测量结果进行了比较。另一个模拟进行了一个更大的宽度的设备，以显示所提出的技术的分布效果和该方法的可靠性，在较高的工作频率。
A new distributed small-signal modeling approach is proposed for high-frequency analysis of transistors, where the extraction methods for each parameter are defined based on solely the structure of the device. An unconditionally stable implicit scheme is presented to analyze the time domain behavior of the device and the obtained results are compared with the measured results of a 0.1-µm N-polar GaN MISHEMT over a broad frequency range. Another simulation is conducted for a device with a larger width to show the distributed effects of the proposed technique and the reliability of the method in higher operating frequencies.