AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility
AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility
复制标题
DOI：
10.1143/apex.5.011002
复制
发表时间：
2012-01-01
影响因子：
2.3
通讯作者：
Chung, Hua
中科院分区：
文献类型：
--
作者：
Cheng, Kai;Liang, Hu;Chung, Hua
本文首次在200 mm Si（111）衬底上制备了Al0.35GaN/GaN/Al0.25GaN双异质结场效应晶体管。通过优化Al0.75GaN/Al0.5GaN中间层和AlN成核层，获得了厚的无裂纹Al0.25GaN缓冲层。在缓冲层总厚度为4.6 μ m的样品上，最高缓冲层击穿电压达到1380 V。根据货车德堡霍尔测量，电子迁移率为1766 cm（2）V-1 s（-1），电子密度为1.16 x 10（13）cm（-2），这导致薄层电阻非常低，为306 +/- 8 Ω/平方。(C)2012日本应用物理学会
In this work, we demonstrate, for the first time, Al0.35GaN/GaN/Al0.25GaN double heterostructure field effect transistors on 200 mm Si(111) substrates. Thick crack-free Al0.25GaN buffer layers are achieved by optimizing Al0.75GaN/Al0.5GaN intermediate layers and AlN nucleation layers. The highest buffer breakdown voltage reaches 1380 V on a sample with a total buffer thickness of 4.6 mu m. According to Van der Pauw Hall measurements, the electron mobility is 1766 cm(2) V-1 s(-1) and the electron density is 1.16 x 10(13) cm(-2), which results in a very low sheet resistance of 306 +/- 8 Omega/square. (C) 2012 The Japan Society of Applied Physics