HfO2 high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability
HfO2 high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability
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DOI：
10.1063/1.2137897
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发表时间：
2005-11
影响因子：
4
通讯作者：
J. Seo;C. Dieker;J. Locquet;G. Mavrou;A. Dimoulas
中科院分区：
文献类型：
--
作者：
J. Seo;C. Dieker;J. Locquet;G. Mavrou;A. Dimoulas
研究了分子束外延技术在(100)Ge衬底上生长HfO2薄膜。用透射电子显微镜比较了在清洁的Ge表面上生长的薄膜与在Geox和GeOxNy钝化层上生长的薄膜的结构特征。发现界面非常平坦和薄，界面层有一到两个单分子层厚。然而，当沉积在任何一个界面层上时，都检测到了氧化物中的微量Ge，这可以解释为在HfO2沉积之前，用原子氧/氮束生长的界面层不稳定。
We have investigated the growth of HfO2 thin films on (100)Ge by molecular beam epitaxy. By means of transmission electron microscopy, the structural characteristics of the films grown on clean Ge surfaces are compared with those grown on passivation layers of GeOx and GeOxNy. The interface was found to be very flat and thin, with an interfacial layer one or two monolayer thick. However, traces of Ge in the oxide have been detected when deposited on either one of the interfacial layers, which can be explained by the instability of the interfacial layers grown with an atomic oxygen/nitrogen beam, prior to the HfO2 deposition.